Aluminum nitride(AlN) ceramic 310*310*1.0mm which can be GaN-on-QST substrate

We just produced a 310 * 310 * 1.0mm of thermal conductivity aluminum nitride ceramic that can be used as a semiconductor 12-inch GaN-on-QST substrate.

GaN-on-QST，QST is the abbreviation of "Qromis substrate technology", which is a substrate for GaN epitaxy, with properties similar to GaN coefficient of thermal expansion.GaN-on-QST that the underlying substrate is aluminum nitride ceramic sheet .

Below is the contrast of GaN/Si and GaN/QST substrate ,QST substrate has more advantages，and the cost is lower than GaN/Si substrate.

In near future,GaN/QST with AlN ceramic underlying substrate will be a new wonderful application.